IKD04N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD04N60RC2ATMA1
$1.10
Available to order
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$1.078
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$1.067
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$1.056
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$1.045
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IKD04N60RC2ATMA1
$1.10
Product details
Maximize power efficiency with the IKD04N60RC2ATMA1 single IGBT transistor by Infineon Technologies. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The IKD04N60RC2ATMA1 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the IKD04N60RC2ATMA1 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
- Power - Max: 36.6 W
- Switching Energy: 100µJ (on), 40µJ (off)
- Input Type: Standard
- Gate Charge: 24 nC
- Td (on/off) @ 25°C: 4ns/90ns
- Test Condition: 400V, 4A, 49Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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