IKB30N65ES5ATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 650V 62A D2PAK
$1.87
Available to order
Reference Price (USD)
1,000+
$2.12959
Exquisite packaging
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IKB30N65ES5ATMA1
$1.87
Product details
Optimize your power electronics with the IKB30N65ES5ATMA1 single IGBT transistor from Infineon Technologies. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The IKB30N65ES5ATMA1 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the IKB30N65ES5ATMA1 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 62 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 560µJ (on), 320µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 17ns/124ns
- Test Condition: 400V, 30A, 13Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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