IGB50N65H5ATMA1
Infineon Technologies
Infineon Technologies
IGBT PRODUCTS
$2.59
Available to order
Reference Price (USD)
1,000+
$1.91953
2,000+
$1.82812
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IGB50N65H5ATMA1
$2.59
Product details
Upgrade your power electronics with the IGB50N65H5ATMA1 single IGBT transistor from Infineon Technologies. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The IGB50N65H5ATMA1 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the IGB50N65H5ATMA1 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 270 W
- Switching Energy: 1.59mJ (on), 750µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 23ns/173ns
- Test Condition: 400V, 50A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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