IDW10G65C5XKSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO247-3
$5.74
Available to order
Reference Price (USD)
1+
$5.38000
10+
$4.86400
240+
$4.05017
720+
$3.50132
1,200+
$3.00923
Exquisite packaging
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IDW10G65C5XKSA1
$5.74
Product details
Infineon Technologies's IDW10G65C5XKSA1 single rectifier diode delivers exceptional performance in a compact, reliable package. This component is designed for efficient power rectification with minimal energy loss, featuring advanced semiconductor materials for optimal thermal management. The diode exhibits excellent forward conduction characteristics and reliable reverse blocking capability, making it suitable for diverse electronic systems. Its fast recovery time ensures efficient operation in high-frequency switching applications. Primary uses include telecommunications infrastructure, server power supplies, and medical imaging equipment. The IDW10G65C5XKSA1 also performs well in harsh environment applications such as downhole drilling instrumentation. Key features include superior surge current tolerance and stable operation across temperature variations. Engineers will appreciate its consistent performance in precision power conversion tasks. For technical specifications and purchasing options, contact our expert team to discuss your application requirements.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 180 µA @ 650 V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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