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IDP30E65D2XKSA1

Infineon Technologies
IDP30E65D2XKSA1 Preview
Infineon Technologies
DIODE GEN PURP 650V 60A TO220-2
$2.11
Available to order
Reference Price (USD)
500+
$1.28100
Exquisite packaging
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IDP30E65D2XKSA1

IDP30E65D2XKSA1

$2.11

Product details

Discover the versatility of Infineon Technologies's IDP30E65D2XKSA1 single rectifier diode, engineered for precision power control in modern electronics. This component delivers efficient AC to DC conversion with minimal energy loss, thanks to its advanced semiconductor technology. The diode features excellent forward bias characteristics and reliable reverse voltage protection, ensuring stable operation in diverse circuit configurations. Its compact package design facilitates easy PCB integration while maintaining superior thermal properties. Common applications include solar power systems, uninterruptible power supplies, and audio amplification equipment. The IDP30E65D2XKSA1 performs exceptionally well in high-temperature environments, making it suitable for automotive under-hood applications. Other notable features include fast response times and consistent performance under varying load conditions. Electrical engineers will appreciate its reliability in critical power management tasks. To explore how this diode can enhance your designs, request product specifications and pricing information today.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 60A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 42 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -40°C ~ 175°C

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