IDH12G65C6XKSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 650V 27A TO220-2
$6.11
Available to order
Reference Price (USD)
1+
$5.37000
10+
$4.82000
100+
$3.94880
500+
$3.36150
1,000+
$2.83500
Exquisite packaging
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IDH12G65C6XKSA1
$6.11
Product details
Experience superior rectification performance with the IDH12G65C6XKSA1 single diode from Infineon Technologies, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The IDH12G65C6XKSA1 performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the IDH12G65C6XKSA1 delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 27A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 420 V
- Capacitance @ Vr, F: 594pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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