IDH04G65C6XKSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 650V 12A TO220-2
$2.55
Available to order
Reference Price (USD)
1+
$2.15000
10+
$1.92900
100+
$1.55060
500+
$1.27400
1,000+
$1.05560
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IDH04G65C6XKSA1
$2.55
Product details
The IDH04G65C6XKSA1 from Infineon Technologies represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The IDH04G65C6XKSA1 is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the IDH04G65C6XKSA1 is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 14 µA @ 420 V
- Capacitance @ Vr, F: 205pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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