IDB30E120ATMA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 50A TO263-3
$2.43
Available to order
Reference Price (USD)
1,000+
$1.34357
2,000+
$1.29724
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IDB30E120ATMA1
$2.43
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 243 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
- Operating Temperature - Junction: -55°C ~ 150°C
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