IAUZ18N10S5L420ATMA1
Infineon Technologies
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Infineon Technologies
MOSFET N-CH 100V 18A TSDSON-8-32
$0.55
Available to order
Reference Price (USD)
1+
$0.54960
500+
$0.544104
1000+
$0.538608
1500+
$0.533112
2000+
$0.527616
2500+
$0.52212
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-32
- Package / Case: 8-PowerTDFN