IAUC60N06S5N074ATMA1
Infineon Technologies
Infineon Technologies
MOSFET_)40V 60V) PG-TDSON-8
$0.64
Available to order
Reference Price (USD)
1+
$0.63520
500+
$0.628848
1000+
$0.622496
1500+
$0.616144
2000+
$0.609792
2500+
$0.60344
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 19µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1461 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN