IAUC120N04S6N009ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 120A 8TDSON-33
$3.14
Available to order
Reference Price (USD)
5,000+
$1.29129
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IAUC120N04S6N009ATMA1
$3.14
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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