FZ1000R33HE3C1NOSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K
$100,000.00
Available to order
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$99999.99999
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$98999.9999901
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$97999.9999902
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$96999.9999903
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$95999.9999904
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$94999.9999905
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FZ1000R33HE3C1NOSA1
$100,000.00
Product details
The FZ1000R33HE3C1NOSA1 IGBT module from Infineon Technologies is a premium solution for high-power applications in the discrete semiconductor products segment. With its cutting-edge technology, this module delivers superior efficiency and reliability. It features low conduction losses and high thermal conductivity, ensuring optimal performance in demanding environments. The FZ1000R33HE3C1NOSA1 is widely used in industrial welding machines, providing stable and precise power control. It is also a preferred choice for servo drives, enhancing motion control accuracy. Furthermore, this module is ideal for renewable energy storage systems, supporting efficient energy management. For professionals seeking a high-performance IGBT module, the FZ1000R33HE3C1NOSA1 is a reliable option. Submit your inquiry today to explore its full potential and get a competitive quote.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1 kA
- Power - Max: 1600000 W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB130-3
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