FS75R12W2T4BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 107A 375W
$75.86
Available to order
Reference Price (USD)
15+
$56.56267
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Infineon Technologies FS75R12W2T4BOMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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FS75R12W2T4BOMA1
$75.86
Product details
The FS75R12W2T4BOMA1 transistor from Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for high-speed switching and low power dissipation, this transistor is a reliable choice for various electronic circuits. Its robust design ensures long-term stability and performance, even under demanding conditions. The FS75R12W2T4BOMA1 is particularly effective in audio amplifiers, delivering clear and distortion-free sound. It also performs exceptionally well in power supply units, ensuring efficient voltage regulation. Another common application is in lighting systems, where it provides precise control over brightness and energy usage. For engineers and designers looking for a dependable transistor, the FS75R12W2T4BOMA1 is an excellent option. Contact us today to inquire about pricing and availability, and take the first step toward optimizing your electronic designs.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 107 A
- Power - Max: 375 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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