FP50R12W2T7B11BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY
$76.78
Available to order
Reference Price (USD)
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$76.78000
500+
$76.0122
1000+
$75.2444
1500+
$74.4766
2000+
$73.7088
2500+
$72.941
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FP50R12W2T7B11BOMA1
$76.78
Product details
The FP50R12W2T7B11BOMA1 from Infineon Technologies is a high-performance IGBT module designed for demanding industrial applications. This advanced discrete semiconductor product offers superior efficiency and reliability, making it ideal for power conversion and motor control systems. With robust construction and optimized thermal management, the FP50R12W2T7B11BOMA1 ensures consistent performance in harsh environments. Key features include low switching losses, high current capacity, and excellent thermal stability. These characteristics make it a preferred choice for engineers seeking durable and efficient solutions. The FP50R12W2T7B11BOMA1 is widely used in renewable energy systems, such as solar inverters and wind turbines, where efficiency is critical. It also finds applications in industrial motor drives, providing precise control and energy savings. Additionally, this IGBT module is suitable for electric vehicle charging stations, ensuring fast and reliable power delivery. For detailed specifications and pricing, submit an inquiry today to learn how the FP50R12W2T7B11BOMA1 can enhance your project.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
- Current - Collector Cutoff (Max): 8 µA
- Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B-2
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