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FF6MR12W2M1PB11BPSA1

Infineon Technologies
FF6MR12W2M1PB11BPSA1 Preview
Infineon Technologies
MOSFET MODULE LOW POWER EASY
$433.92
Available to order
Reference Price (USD)
1+
$433.92000
500+
$429.5808
1000+
$425.2416
1500+
$420.9024
2000+
$416.5632
2500+
$412.224
Exquisite packaging
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Infineon Technologies FF6MR12W2M1PB11BPSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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FF6MR12W2M1PB11BPSA1

FF6MR12W2M1PB11BPSA1

$433.92

Product details

The FF6MR12W2M1PB11BPSA1 by Infineon Technologies is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the FF6MR12W2M1PB11BPSA1 include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the FF6MR12W2M1PB11BPSA1. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.

General specs

  • Product Status: Last Time Buy
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
  • Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: 20mW (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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