Shopping cart

Subtotal: $0.00

FF6MR12KM1PHOSA1

Infineon Technologies
FF6MR12KM1PHOSA1 Preview
Infineon Technologies
MEDIUM POWER 62MM
$532.68
Available to order
Reference Price (USD)
1+
$532.68000
500+
$527.3532
1000+
$522.0264
1500+
$516.6996
2000+
$511.3728
2500+
$506.046
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies FF6MR12KM1PHOSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FF6MR12KM1PHOSA1

FF6MR12KM1PHOSA1

$532.68

Product details

The FF6MR12KM1PHOSA1 by Infineon Technologies is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe FF6MR12KM1PHOSA1 features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the FF6MR12KM1PHOSA1. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.

General specs

  • Product Status: Last Time Buy
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.81mOhm @ 250A, 15V
  • Vgs(th) (Max) @ Id: 5.15V @ 80mA
  • Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-62MM

Viewed products

Advanced Linear Devices Inc.

ALD210802PCL

$0.00 (not set)
onsemi

NTJD1155LT1G

$0.00 (not set)
Fairchild Semiconductor

FDS6993

$0.00 (not set)
onsemi

NTUD3169CZT5G

$0.00 (not set)
Nexperia USA Inc.

NX1029XH

$0.00 (not set)
Nexperia USA Inc.

PMDT290UCEH

$0.00 (not set)
Rohm Semiconductor

BSM250D17P2E004

$0.00 (not set)
Diodes Incorporated

DMN6066SSD-13

$0.00 (not set)
Diodes Incorporated

DMP4025LSD-13

$0.00 (not set)
Diodes Incorporated

DMP31D7LDWQ-7

$0.00 (not set)
Top