FF1200R12KE3NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 5000W
$0.00
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Reference Price (USD)
2+
$987.53000
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
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FF1200R12KE3NOSA1
$0.00
Product details
Discover the FF1200R12KE3NOSA1 transistor module by Infineon Technologies, a standout in the discrete semiconductor products category. This high-performance component is designed for fast switching and low energy consumption, making it ideal for modern electronics. Its compact and robust design ensures easy integration and long-lasting performance. The FF1200R12KE3NOSA1 is commonly used in consumer electronics, such as televisions and gaming consoles, for efficient power management. It also plays a vital role in automotive electronics, enhancing vehicle safety and performance. Additionally, this transistor module is utilized in telecommunications equipment, ensuring reliable signal processing. If you re looking for a high-quality transistor module, the FF1200R12KE3NOSA1 is an excellent choice. Contact us today to learn more and place your order.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Power - Max: 5000 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 86 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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