F3L75R07W2E3B11BOMA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 650V 95A 250W
$61.73
Available to order
Reference Price (USD)
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$48.73067
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F3L75R07W2E3B11BOMA1
$61.73
Product details
Upgrade your power systems with the F3L75R07W2E3B11BOMA1 transistor by Infineon Technologies. This discrete semiconductor product is engineered for high efficiency and durability, making it suitable for a wide range of applications. Its fast switching capability and low power loss ensure excellent performance in electronic circuits. The F3L75R07W2E3B11BOMA1 is particularly effective in switch-mode power supplies, offering reliable voltage regulation. It is also used in motor control systems, providing smooth and efficient operation. Additionally, this transistor is a key component in LED lighting, ensuring energy-efficient illumination. For engineers looking for a high-quality transistor, the F3L75R07W2E3B11BOMA1 is a top contender. Request more information today and discover how it can benefit your projects.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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