F3L200R07PE4BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 650V 200A 680W
$152.09
Available to order
Reference Price (USD)
6+
$146.60667
Exquisite packaging
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F3L200R07PE4BOSA1
$152.09
Product details
Experience superior performance with the F3L200R07PE4BOSA1 transistor module by Infineon Technologies. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The F3L200R07PE4BOSA1 is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the F3L200R07PE4BOSA1 is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 680 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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