DF75R12W1H4FB11BOMA2
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 25A 20MW
$98.68
Available to order
Reference Price (USD)
24+
$73.37958
Exquisite packaging
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Infineon Technologies DF75R12W1H4FB11BOMA2 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Upgrade your power systems with the DF75R12W1H4FB11BOMA2 transistor by Infineon Technologies. This discrete semiconductor product is engineered for high efficiency and durability, making it suitable for a wide range of applications. Its fast switching capability and low power loss ensure excellent performance in electronic circuits. The DF75R12W1H4FB11BOMA2 is particularly effective in switch-mode power supplies, offering reliable voltage regulation. It is also used in motor control systems, providing smooth and efficient operation. Additionally, this transistor is a key component in LED lighting, ensuring energy-efficient illumination. For engineers looking for a high-quality transistor, the DF75R12W1H4FB11BOMA2 is a top contender. Request more information today and discover how it can benefit your projects.
General specs
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 25A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module