DF400R12KE3HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 580A 2000W
$128.78
Available to order
Reference Price (USD)
10+
$134.85700
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DF400R12KE3HOSA1
$128.78
Product details
Upgrade your power systems with the DF400R12KE3HOSA1 transistor by Infineon Technologies. This discrete semiconductor product is engineered for high efficiency and durability, making it suitable for a wide range of applications. Its fast switching capability and low power loss ensure excellent performance in electronic circuits. The DF400R12KE3HOSA1 is particularly effective in switch-mode power supplies, offering reliable voltage regulation. It is also used in motor control systems, providing smooth and efficient operation. Additionally, this transistor is a key component in LED lighting, ensuring energy-efficient illumination. For engineers looking for a high-quality transistor, the DF400R12KE3HOSA1 is a top contender. Request more information today and discover how it can benefit your projects.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 580 A
- Power - Max: 2000 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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