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DD800S17H4B2BOSA2

Infineon Technologies
DD800S17H4B2BOSA2 Preview
Infineon Technologies
DIODE MODUL GP 1700V AGIHMB130-1
$1,275.58
Available to order
Reference Price (USD)
2+
$839.20000
Exquisite packaging
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DD800S17H4B2BOSA2

DD800S17H4B2BOSA2

$1,275.58

Product details

General specs

  • Product Status: Active
  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 900 A @ 900 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHMB130-1

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