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CYDMX128B16-65BVXI

Infineon Technologies
CYDMX128B16-65BVXI Preview
Infineon Technologies
IC SRAM 128KBIT PAR 100VFBGA
$7.99
Available to order
Reference Price (USD)
1+
$9.27000
10+
$8.53400
25+
$8.35680
50+
$8.32740
100+
$7.47050
Exquisite packaging
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Infineon Technologies CYDMX128B16-65BVXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CYDMX128B16-65BVXI

CYDMX128B16-65BVXI

$7.99

Product details

Infineon Technologies's CYDMX128B16-65BVXI memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply. The CYDMX128B16-65BVXI features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs. Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The CYDMX128B16-65BVXI is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment. Discover the full potential of this Infineon Technologies memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the CYDMX128B16-65BVXI to meet your project timeline and budget requirements.

General specs

  • Product Status: Obsolete
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, MoBL
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 65ns
  • Access Time: 65 ns
  • Voltage - Supply: 1.8V ~ 3.3V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VFBGA (6x6)

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