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CYDM128B08-55BVXI

Infineon Technologies
CYDM128B08-55BVXI Preview
Infineon Technologies
IC SRAM 128KBIT PAR 100VFBGA
$6.08
Available to order
Reference Price (USD)
1+
$6.08000
500+
$6.0192
1000+
$5.9584
1500+
$5.8976
2000+
$5.8368
2500+
$5.776
Exquisite packaging
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Infineon Technologies CYDM128B08-55BVXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CYDM128B08-55BVXI

CYDM128B08-55BVXI

$6.08

Product details

The CYDM128B08-55BVXI memory IC by Infineon Technologies delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications. Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The CYDM128B08-55BVXI offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance. Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The CYDM128B08-55BVXI is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis. To learn more about implementing this Infineon Technologies memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the CYDM128B08-55BVXI memory solution.

General specs

  • Product Status: Obsolete
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, MoBL
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VFBGA (6x6)

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