CYD09S72V-133BBI
Infineon Technologies
Infineon Technologies
IC SRAM 9MBIT PARALLEL 484FBGA
$286.78
Available to order
Reference Price (USD)
1+
$286.78000
500+
$283.9122
1000+
$281.0444
1500+
$278.1766
2000+
$275.3088
2500+
$272.441
Exquisite packaging
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Infineon Technologies CYD09S72V-133BBI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CYD09S72V-133BBI
$286.78
Product details
Introducing the CYD09S72V-133BBI from Infineon Technologies, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The CYD09S72V-133BBI incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The CYD09S72V-133BBI also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Infineon Technologies memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the CYD09S72V-133BBI to ensure successful implementation in your design.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 9Mb (128K x 72)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 4.4 ns
- Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 484-BGA
- Supplier Device Package: 484-FBGA (23x23)
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