CY7S1049GE30-10VXI
Infineon Technologies
Infineon Technologies
IC SRAM 4MBIT PARALLEL 36SOJ
$9.60
Available to order
Reference Price (USD)
1+
$11.27000
10+
$10.53700
25+
$10.32760
95+
$10.27821
190+
$9.20537
285+
$8.81474
570+
$8.73770
1,045+
$8.49011
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies CY7S1049GE30-10VXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7S1049GE30-10VXI
$9.60
Product details
The CY7S1049GE30-10VXI memory IC by Infineon Technologies delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The CY7S1049GE30-10VXI offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The CY7S1049GE30-10VXI is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Infineon Technologies memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the CY7S1049GE30-10VXI memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (512K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 10ns
- Access Time: 10 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package: 36-SOJ
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