CY7C1362B-166BGC
Infineon Technologies
Infineon Technologies
IC SRAM 9MBIT PARALLEL 119PBGA
$7.71
Available to order
Reference Price (USD)
1+
$7.71000
500+
$7.6329
1000+
$7.5558
1500+
$7.4787
2000+
$7.4016
2500+
$7.3245
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies CY7C1362B-166BGC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1362B-166BGC
$7.71
Product details
Infineon Technologies's CY7C1362B-166BGC memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The CY7C1362B-166BGC features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The CY7C1362B-166BGC is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Infineon Technologies memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the CY7C1362B-166BGC to meet your project timeline and budget requirements.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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