CY7C1360S-200AXI
Infineon Technologies
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP
$11.42
Available to order
Reference Price (USD)
1+
$11.42000
500+
$11.3058
1000+
$11.1916
1500+
$11.0774
2000+
$10.9632
2500+
$10.849
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies CY7C1360S-200AXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1360S-200AXI
$11.42
Product details
Enhance your system's performance with the CY7C1360S-200AXI memory IC from Infineon Technologies, a cutting-edge solution for modern data storage needs. This memory product delivers exceptional speed and reliability, engineered to meet the rigorous demands of today's electronic applications. Its innovative design ensures optimal performance in various operating conditions.
The CY7C1360S-200AXI boasts features such as extended endurance, wide operating voltage range, and excellent temperature stability. These characteristics make it particularly suitable for applications requiring consistent performance under challenging environmental conditions. The memory IC maintains data integrity even during power fluctuations, providing peace of mind for critical systems.
Ideal applications include aerospace avionics systems, military communication equipment, and industrial control units. The CY7C1360S-200AXI also excels in IoT devices requiring persistent memory and enterprise storage solutions demanding high capacity. Its versatility extends to renewable energy systems where reliable data storage is crucial for operation monitoring.
Contact us today through our online inquiry system to learn more about the CY7C1360S-200AXI and how it can benefit your specific application. Our experts are ready to assist with technical details and procurement options for this Infineon Technologies memory solution.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3 ns
- Voltage - Supply: 3.14V ~ 3.63V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x20)
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