CY7C1355C-133BGXC
Infineon Technologies
Infineon Technologies
IC SRAM 9MBIT PARALLEL 119PBGA
$10.04
Available to order
Reference Price (USD)
1+
$10.04000
500+
$9.9396
1000+
$9.8392
1500+
$9.7388
2000+
$9.6384
2500+
$9.538
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies CY7C1355C-133BGXC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1355C-133BGXC
$10.04
Product details
Optimize your system's memory performance with the CY7C1355C-133BGXC from Infineon Technologies, a versatile IC solution for diverse storage requirements. This memory product offers an ideal combination of speed, density, and power efficiency, suitable for both volatile and non-volatile applications. Its flexible architecture supports various system configurations.
The CY7C1355C-133BGXC features include burst mode operation, low-latency access, and configurable I/O options. These capabilities enable efficient data handling in performance-sensitive applications. The memory IC demonstrates excellent thermal characteristics, ensuring reliable operation in high-temperature environments. Its design incorporates noise reduction techniques for signal integrity.
Application areas include server memory modules, graphics processing units, and network switches. The CY7C1355C-133BGXC is equally effective in digital cameras, gaming consoles, and audio processing equipment. Industrial applications include CNC machinery, test and measurement systems, and building automation controllers requiring dependable memory solutions.
Request detailed information about this Infineon Technologies memory IC by submitting an online inquiry. Our team provides comprehensive support from technical consultation to volume procurement of the CY7C1355C-133BGXC, ensuring optimal memory solutions for your specific needs.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, SDR
- Memory Size: 9Mb (256K x 36)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 6.5 ns
- Voltage - Supply: 3.135V ~ 3.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 119-BGA
- Supplier Device Package: 119-PBGA (14x22)
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