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CY7C1321KV18-250BZXCT

Infineon Technologies
CY7C1321KV18-250BZXCT Preview
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$25.35
Available to order
Reference Price (USD)
1,000+
$19.59552
Exquisite packaging
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TNT 2-6 days
EMS 3-7 days

Infineon Technologies CY7C1321KV18-250BZXCT is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CY7C1321KV18-250BZXCT

CY7C1321KV18-250BZXCT

$25.35

Product details

The CY7C1321KV18-250BZXCT memory IC by Infineon Technologies delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications. Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The CY7C1321KV18-250BZXCT offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance. Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The CY7C1321KV18-250BZXCT is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis. To learn more about implementing this Infineon Technologies memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the CY7C1321KV18-250BZXCT memory solution.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)

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