CY7C1321KV18-250BZXC
Infineon Technologies
Infineon Technologies
NO WARRANTY
$9.29
Available to order
Reference Price (USD)
1+
$27.97000
10+
$26.28900
25+
$25.38560
50+
$24.57900
136+
$21.62765
272+
$21.04702
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies CY7C1321KV18-250BZXC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1321KV18-250BZXC
$9.29
Product details
The CY7C1321KV18-250BZXC memory IC by Infineon Technologies delivers cutting-edge storage technology for advanced computing applications. This high-performance solution combines speed, capacity, and reliability in a single package, addressing the growing demands of data-centric systems. Its architecture is optimized for both standalone and embedded memory applications.
Product highlights include parallel processing support, multi-bank operation capability, and advanced data protection features. The CY7C1321KV18-250BZXC offers excellent signal integrity at high frequencies, making it suitable for high-speed system designs. Its power-efficient operation extends battery life in portable applications while maintaining consistent performance.
Target applications include neural network processors, cloud computing infrastructure, and high-frequency trading systems. The CY7C1321KV18-250BZXC is also perfect for video processing equipment, scientific research instruments, and telecommunications base stations. Its capabilities extend to automotive vision systems and industrial quality inspection machines requiring real-time data analysis.
To learn more about implementing this Infineon Technologies memory IC in your project, submit your requirements through our online platform. Our technical specialists will provide application-specific guidance and procurement options for the CY7C1321KV18-250BZXC memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, DDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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