CY7C1313BV18-200BZC
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$30.93
Available to order
Reference Price (USD)
1+
$30.93000
500+
$30.6207
1000+
$30.3114
1500+
$30.0021
2000+
$29.6928
2500+
$29.3835
Exquisite packaging
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Infineon Technologies CY7C1313BV18-200BZC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY7C1313BV18-200BZC
$30.93
Product details
Introducing the CY7C1313BV18-200BZC from Infineon Technologies, a high-reliability memory IC designed for next-generation electronic systems. This memory solution offers exceptional data integrity and access speeds, catering to the most demanding application requirements. Its architecture is optimized for both performance and power efficiency in diverse operating environments.
Key characteristics include sector-based protection mechanisms, rapid erase/write cycles, and extended data retention periods. The CY7C1313BV18-200BZC incorporates intelligent power management features that automatically adjust to system requirements, maximizing energy efficiency without sacrificing performance. Its robust design ensures operation stability across various voltage conditions.
The memory IC excels in applications such as autonomous vehicle perception systems, industrial IoT gateways, and enterprise SSD storage. It's equally effective in augmented reality devices, satellite communication equipment, and factory automation controllers. The CY7C1313BV18-200BZC also serves well in smart city infrastructure and portable military communication devices.
For detailed technical information and purchasing options for this Infineon Technologies memory solution, please use our online inquiry system. We offer flexible supply chain solutions and application engineering support for the CY7C1313BV18-200BZC to ensure successful implementation in your design.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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