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CY7C1021DV33-10ZSXI

Infineon Technologies
CY7C1021DV33-10ZSXI Preview
CY7C1021DV33-10ZSXI Preview
CY7C1021DV33-10ZSXI
CY7C1021DV33-10ZSXI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
$3.28
Available to order
Reference Price (USD)
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$3.28000
500+
$3.2472
1000+
$3.2144
1500+
$3.1816
2000+
$3.1488
2500+
$3.116
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Infineon Technologies CY7C1021DV33-10ZSXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CY7C1021DV33-10ZSXI

CY7C1021DV33-10ZSXI

$3.28

Product details

Discover the CY7C1021DV33-10ZSXI by Infineon Technologies, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The CY7C1021DV33-10ZSXI features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The CY7C1021DV33-10ZSXI is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Infineon Technologies memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the CY7C1021DV33-10ZSXI, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II

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