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CY62148ELL-55SXI

Infineon Technologies
CY62148ELL-55SXI Preview
Infineon Technologies
IC SRAM 4MBIT PARALLEL 32SOIC
$9.28
Available to order
Reference Price (USD)
1+
$5.13000
10+
$4.68600
25+
$4.59640
50+
$4.56480
100+
$4.09500
250+
$4.07924
750+
$3.76163
1,500+
$3.66187
Exquisite packaging
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Infineon Technologies CY62148ELL-55SXI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CY62148ELL-55SXI

CY62148ELL-55SXI

$9.28

Product details

Infineon Technologies's CY62148ELL-55SXI represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability. Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The CY62148ELL-55SXI supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications. The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The CY62148ELL-55SXI serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions. Explore the capabilities of this Infineon Technologies memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the CY62148ELL-55SXI to support your project development cycle.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOIC

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