CY62147DV30L-55ZSXE
Infineon Technologies
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
$6.68
Available to order
Reference Price (USD)
1+
$6.68000
500+
$6.6132
1000+
$6.5464
1500+
$6.4796
2000+
$6.4128
2500+
$6.346
Exquisite packaging
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Infineon Technologies CY62147DV30L-55ZSXE is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY62147DV30L-55ZSXE
$6.68
Product details
Infineon Technologies's CY62147DV30L-55ZSXE memory IC sets new standards in non-volatile storage technology, delivering robust performance for mission-critical applications. This memory solution offers the perfect balance of speed, capacity, and reliability, engineered to meet the evolving needs of modern electronics. Its architecture ensures data persistence without constant power supply.
The CY62147DV30L-55ZSXE features include advanced wear-leveling algorithms, error correction capabilities, and wide temperature operation range. These attributes make it particularly valuable for applications requiring long-term data retention and consistent performance. The memory IC supports various interface protocols, enabling easy integration into existing system designs.
Primary applications include automotive telematics systems, industrial programmable logic controllers, and smart grid infrastructure. The CY62147DV30L-55ZSXE is also ideal for wearable health monitors, digital signage solutions, and edge computing devices. Its reliability makes it suitable for aerospace black box recorders and underground mining equipment.
Discover the full potential of this Infineon Technologies memory IC by submitting your inquiry through our online portal. Our sales team will provide detailed specifications and competitive pricing options for the CY62147DV30L-55ZSXE to meet your project timeline and budget requirements.
General specs
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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