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CY14B104NA-ZS20XI

Infineon Technologies
CY14B104NA-ZS20XI Preview
Infineon Technologies
IC NVSRAM 4MBIT PAR 44TSOP II
$41.67
Available to order
Reference Price (USD)
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$36.32000
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$33.68000
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$32.48920
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$31.68120
135+
$27.74756
270+
$26.98211
Exquisite packaging
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Infineon Technologies CY14B104NA-ZS20XI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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CY14B104NA-ZS20XI

CY14B104NA-ZS20XI

$41.67

Product details

The CY14B104NA-ZS20XI by Infineon Technologies represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The CY14B104NA-ZS20XI demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The CY14B104NA-ZS20XI also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Infineon Technologies memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the CY14B104NA-ZS20XI memory solution.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II

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