CY14B104N-BA25XI
Infineon Technologies
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA
$12.16
Available to order
Reference Price (USD)
1+
$12.16000
500+
$12.0384
1000+
$11.9168
1500+
$11.7952
2000+
$11.6736
2500+
$11.552
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies CY14B104N-BA25XI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY14B104N-BA25XI
$12.16
Product details
Discover the CY14B104N-BA25XI by Infineon Technologies, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications.
The CY14B104N-BA25XI features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation.
Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The CY14B104N-BA25XI is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions.
To learn more about integrating this Infineon Technologies memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the CY14B104N-BA25XI, ensuring optimal memory performance for your specific requirements.
General specs
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (6x10)
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