CY14B101LA-BA45XI
Infineon Technologies
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48FBGA
$21.88
Available to order
Reference Price (USD)
1+
$20.79000
10+
$19.36100
25+
$19.14800
50+
$18.67560
100+
$16.39580
299+
$15.84057
598+
$15.41532
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies CY14B101LA-BA45XI is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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CY14B101LA-BA45XI
$21.88
Product details
Infineon Technologies's CY14B101LA-BA45XI represents a breakthrough in memory IC technology, offering unprecedented performance for data storage applications. This advanced solution combines high-speed operation with exceptional reliability, meeting the stringent requirements of modern electronic systems. Its architecture is designed for seamless integration and future scalability.
Notable features include simultaneous read/write capability, power-loss data protection, and adaptive refresh technology. The CY14B101LA-BA45XI supports multiple operating modes to optimize performance for specific application requirements. Its robust design ensures data integrity even in electrically noisy environments, making it suitable for industrial applications.
The memory IC is ideal for use in financial transaction systems, emergency response equipment, and high-security access control. It also performs exceptionally well in video surveillance systems, e-mobility controllers, and agricultural automation devices. The CY14B101LA-BA45XI serves aerospace applications requiring radiation-tolerant memory and underwater exploration equipment needing pressure-resistant solutions.
Explore the capabilities of this Infineon Technologies memory IC by submitting your inquiry through our digital platform. We offer technical specifications, application notes, and customized procurement solutions for the CY14B101LA-BA45XI to support your project development cycle.
General specs
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 1Mb (128K x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFBGA
- Supplier Device Package: 48-FBGA (6x10)
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