BTS244ZE3062AATMA1
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$2.64
Available to order
Reference Price (USD)
1+
$2.64000
500+
$2.6136
1000+
$2.5872
1500+
$2.5608
2000+
$2.5344
2500+
$2.508
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BTS244ZE3062AATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BTS244ZE3062AATMA1
$2.64
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-5-2
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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