BSZ100N03LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 12A/40A 8TSDSON
$0.92
Available to order
Reference Price (USD)
5,000+
$0.27844
10,000+
$0.26813
25,000+
$0.26250
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| EMS | 3-7 days |
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BSZ100N03LSGATMA1
$0.92
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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