BSS119NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.11393
6,000+
$0.10815
15,000+
$0.09949
30,000+
$0.09371
75,000+
$0.08505
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BSS119NH6327XTSA1
$0.48
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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