BSP60H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP DARL 45V 1A SOT223-4
$0.20
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BSP60H6327XTSA1
$0.20
Product details
Experience superior semiconductor performance with the BSP60H6327XTSA1, a high-efficiency Bipolar Junction Transistor from Infineon Technologies. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The BSP60H6327XTSA1 demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. Infineon Technologies produces the BSP60H6327XTSA1 using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the BSP60H6327XTSA1 stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.
General specs
- Product Status: Not For New Designs
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 1.5 W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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