BSO615NGHUMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 2.6A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.44583
5,000+
$0.42354
12,500+
$0.40762
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BSO615NGHUMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
BSO615NGHUMA1
$0.00
Product details
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.6A
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
Viewed products
