BSO615CGHUMA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.45723
5,000+
$0.43436
12,500+
$0.41804
Exquisite packaging
Discount
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| EMS | 3-7 days |
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BSO615CGHUMA1
$0.00
Product details
General specs
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A
- Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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