BSM50GP120BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 50A
$293.96
Available to order
Reference Price (USD)
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$172.84000
Exquisite packaging
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BSM50GP120BOSA1
$293.96
Product details
Experience superior performance with the BSM50GP120BOSA1 transistor module by Infineon Technologies. This discrete semiconductor product is designed for high-speed switching and energy efficiency, making it a versatile choice for various applications. Its robust construction ensures reliability in challenging conditions. The BSM50GP120BOSA1 is commonly used in power inverters, providing efficient energy conversion. It also excels in automotive ignition systems, enhancing engine performance. Additionally, this module is utilized in home appliances, improving energy savings and functionality. For designers and engineers seeking a high-quality transistor module, the BSM50GP120BOSA1 is a perfect fit. Contact us today to inquire about pricing and availability, and take your projects to the next level.
General specs
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: 3 Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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