BSM150GB170DN2E3256HDLA1
Infineon Technologies
Infineon Technologies
BSM150GB170DN2 - INSULATED GATE
$103.40
Available to order
Reference Price (USD)
1+
$103.40000
500+
$102.366
1000+
$101.332
1500+
$100.298
2000+
$99.264
2500+
$98.23
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DHL / Fedex / UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Infineon Technologies BSM150GB170DN2E3256HDLA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
Product details
The BSM150GB170DN2E3256HDLA1 from Infineon Technologies is a high-performance IGBT module designed for demanding industrial applications. This advanced discrete semiconductor product offers superior efficiency and reliability, making it ideal for power conversion and motor control systems. With robust construction and optimized thermal management, the BSM150GB170DN2E3256HDLA1 ensures consistent performance in harsh environments. Key features include low switching losses, high current capacity, and excellent thermal stability. These characteristics make it a preferred choice for engineers seeking durable and efficient solutions. The BSM150GB170DN2E3256HDLA1 is widely used in renewable energy systems, such as solar inverters and wind turbines, where efficiency is critical. It also finds applications in industrial motor drives, providing precise control and energy savings. Additionally, this IGBT module is suitable for electric vehicle charging stations, ensuring fast and reliable power delivery. For detailed specifications and pricing, submit an inquiry today to learn how the BSM150GB170DN2E3256HDLA1 can enhance your project.
General specs
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module