BSD840NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 20V 0.88A SOT363
$0.43
Available to order
Reference Price (USD)
3,000+
$0.12217
6,000+
$0.11598
15,000+
$0.10669
30,000+
$0.10050
75,000+
$0.09121
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BSD840NH6327XTSA1
$0.43
Product details
The BSD840NH6327XTSA1 by Infineon Technologies is a versatile MOSFET array belonging to the Discrete Semiconductor Products family, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product excels in applications requiring high-speed switching and efficient power handling, making it a go-to solution for modern electronics.\n\nNotable features of the BSD840NH6327XTSA1 include a balanced trade-off between switching speed and power dissipation, excellent noise immunity, and a compact footprint. The array configuration integrates multiple transistors, offering design flexibility and space savings. Its robust construction ensures long-term reliability in various operating conditions.\n\nThis MOSFET array is ideal for use in LED lighting, battery management systems, and communication devices. In LED lighting, it enables precise dimming and power control. Battery management systems rely on its efficiency for charge and discharge cycles. Communication devices benefit from its fast switching and low interference.\n\nElevate your projects with the BSD840NH6327XTSA1. Submit an inquiry now to learn more about pricing and technical specifications. Our team is committed to providing the best solutions for your needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 880mA
- Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs: 0.26nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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