BSC123N10LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 10.6/71A 8TDSON
$2.31
Available to order
Reference Price (USD)
5,000+
$0.80438
10,000+
$0.78750
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| EMS | 3-7 days |
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BSC123N10LSGATMA1
$2.31
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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