BSC0910NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 25V 16A/31A TISON8
$2.93
Available to order
Reference Price (USD)
5,000+
$0.97426
Exquisite packaging
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| EMS | 3-7 days |
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BSC0910NDIATMA1
$2.93
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 11A, 31A
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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