BSC072N03LDGATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 11.5A 8TDSON
$0.00
Available to order
Reference Price (USD)
5,000+
$0.58213
10,000+
$0.56024
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| EMS | 3-7 days |
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BSC072N03LDGATMA1
$0.00
Product details
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11.5A
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
- Power - Max: 57W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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